SOI n-MOSFET low-frequency noise measurements and modeling from room temperature up to 250°C

Author

Dessard, Vincent ; Iñíguez, Benjamin ; Adriaensen, Stéphane ; Flandre, Denis

Author_Institution

Microelectron. Lab., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium

Volume

49

Issue

7

fYear

2002

fDate

7/1/2002 12:00:00 AM

Firstpage

1289

Lastpage

1295

Abstract

This paper deals with SOI n-MOSFET low-frequency noise measurements, analysis, and modeling from room temperature up to 250°C. We observed the occurrence of a Lorentzian-like noise component depending on bias and temperature conditions. An engineering Lorentzian model has been validated and used in order to determine the SOI floating body effect related noise, continuously from fully- to partially-depleted regimes. General considerations about low-noise high-temperature analog circuits are discussed

Keywords

1/f noise; MOS analogue integrated circuits; MOSFET; Poisson equation; high-temperature electronics; semiconductor device models; semiconductor device noise; shot noise; silicon-on-insulator; white noise; 1/f noise; 20 to 250 C; Lorentzian-like noise component; Poisson equation; SOI n-MOSFET; bias conditions; engineering Lorentzian model; floating body continuous model; floating body effect related noise; fully-depleted regimes; low-frequency noise measurements; low-noise high-temperature analog circuits; noise modeling; partially-depleted regimes; power spectral density; shot noise; temperature conditions; white noise; Analog circuits; Circuit noise; Crosstalk; Low-frequency noise; MOSFET circuits; Noise level; Noise measurement; Silicon on insulator technology; Temperature dependence; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.1013288

Filename

1013288