CHISEL flash EEPROM. I. Performance and scaling

Author

Mahapatra, Souvik ; Shukuri, S. ; Bude, Jeff

Author_Institution

Agere Syst., Murray Hill, NJ, USA

Volume

49

Issue

7

fYear

2002

fDate

7/1/2002 12:00:00 AM

Firstpage

1296

Lastpage

1301

Abstract

In this work, we demonstrate the feasibility of using channel initiated secondary electron (CHISEL) programming in high-density flash memories containing fully scaled memory cells. We discuss programming performance, cell channel length scaling, endurance, and reliability of single cells and large arrays. We show successful CHISEL programming operation in fully scaled flash cells having channel lengths down to 0.22 μm. Compared to conventional channel hot electron (CHE) programming, CHISEL operation shows faster programming for identical drain bias, and lower power consumption for similar programming speed. The effect of channel length scaling on CHISEL operation and related device optimization is discussed using measurements and device simulation. Measurement on optimized floating gate contacted devices having channel length down to 0.14 μm show good programming efficiency under CHISEL operation

Keywords

CMOS memory circuits; Monte Carlo methods; PLD programming; flash memories; hot carriers; impact ionisation; integrated circuit modelling; integrated circuit reliability; CHISEL flash EEPROM; Monte Carlo simulator; cell channel length scaling; channel initiated secondary electron programming; device optimization; device simulation; endurance; fully scaled memory cells; high-density flash memories; hot holes; impact ionization; large arrays; optimized floating gate contacted devices; programming performance; reliability; single cells; Channel hot electron injection; Charge carrier processes; EPROM; Hot carriers; Impact ionization; Integrated circuit technology; Length measurement; MOSFET circuits; Microelectronics; Substrate hot electron injection;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.1013289

Filename

1013289