Title :
Improvement of polycrystalline silicon thin film transistor using oxygen plasma pretreatment before laser crystallization
Author :
Moon, Kook Chul ; Lee, Jae-Hoon ; Han, Min-Koo
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
fDate :
7/1/2002 12:00:00 AM
Abstract :
The device characteristics of the excimer laser recrystallize low temperature poly-Si (polycrystalline silicon) thin-film transistor (TFT) has been improved by employing an oxygen plasma pretreatment on the active amorphous silicon layer prior to the laser crystallization. The oxygen plasma pretreatment has reduced the number of interface traps and increased the field effective mobility in the polysilicon TFT. The device stability of the oxygen plasma pretreated TFTs under the dc stress has been improved due to strong Si-O bond formation during the laser recrystallization
Keywords :
carrier mobility; electron traps; elemental semiconductors; oxidation; recrystallisation annealing; silicon; thin film transistors; O2; Si; bond formation; device stability; excimer laser recrystallization; field effective mobility; interface traps; low temperature transistor; oxidation; plasma pretreatment; polysilicon thin film transistor; Amorphous silicon; Bonding; Crystallization; Laser stability; Plasma devices; Plasma properties; Plasma stability; Plasma temperature; Stress; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.1013295
