Improvement of polycrystalline silicon thin film transistor using oxygen plasma pretreatment before laser crystallization

Author

Moon, Kook Chul ; Lee, Jae-Hoon ; Han, Min-Koo

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

Volume

49

Issue

7

fYear

2002

fDate

7/1/2002 12:00:00 AM

Firstpage

1319

Lastpage

1322

Abstract

The device characteristics of the excimer laser recrystallize low temperature poly-Si (polycrystalline silicon) thin-film transistor (TFT) has been improved by employing an oxygen plasma pretreatment on the active amorphous silicon layer prior to the laser crystallization. The oxygen plasma pretreatment has reduced the number of interface traps and increased the field effective mobility in the polysilicon TFT. The device stability of the oxygen plasma pretreated TFTs under the dc stress has been improved due to strong Si-O bond formation during the laser recrystallization

Keywords

carrier mobility; electron traps; elemental semiconductors; oxidation; recrystallisation annealing; silicon; thin film transistors; O₂; Si; bond formation; device stability; excimer laser recrystallization; field effective mobility; interface traps; low temperature transistor; oxidation; plasma pretreatment; polysilicon thin film transistor; Amorphous silicon; Bonding; Crystallization; Laser stability; Plasma devices; Plasma properties; Plasma stability; Plasma temperature; Stress; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.1013295

Filename

1013295