Equivalent junction method to predict 3-D effect of curved-abrupt p-n junctions

Author

He, Jin ; Xi, Xuemei ; Chan, Mansun ; Hu, Chenming ; Li, Yingxue ; Zhang, Xing ; Huang, Ru ; Wang, Yangyuan

Author_Institution

Electron. Res. Lab. of Electron. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

49

Issue

7

fYear

2002

fDate

7/1/2002 12:00:00 AM

Firstpage

1322

Lastpage

1325

Abstract

In this brief, an equivalent junction method is proposed to study three-dimensional (3-D) effect of the lateral curvature on curved-abrupt junctions. Analytical expressions including 3-D effect are derived to calculate the breakdown voltage, peak electrical field, and maximum depletion layer width of curved-abrupt junctions. The breakdown voltages calculated from the new analytic expression have been verified by the numerical simulation and experimental data. The equivalent junction model provides a simple means for device engineers to estimate the required substrate doping concentration, lateral curvature, junction depth and depletion width of a planar p-n junction with a specific breakdown voltage

Keywords

doping profiles; p-n junctions; semiconductor device breakdown; semiconductor device models; breakdown voltage; curved-abrupt p-n junctions; equivalent junction method; junction depth; lateral curvature; maximum depletion layer width; numerical simulation; peak electrical field; planar p-n junction; substrate doping concentration; three-dimensional effect; Analytical models; Doping; Electric breakdown; Geometry; Helium; Microelectronics; Numerical simulation; P-n junctions; Silicon; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.1013296

Filename

1013296