Title :
Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures
Author :
Sarua, Andrei ; Ji, Hangfeng ; Kuball, Martin ; Uren, Michael J. ; Martin, Trevor ; Hilton, Keith P. ; Balmer, Richard S.
Author_Institution :
Phys. Lab., Bristol Univ.
Abstract :
Self-heating in AlGaN/GaN device structures was probed using integrated micro-Raman/Infrared (IR) thermography. IR imaging provided large-area-overview temperature maps of powered devices. Micro-Raman spectroscopy was used to obtain high-spatial-resolution temperature profiles over the active area of the devices. Depth scans were performed to obtain temperature in the heat-sinking SiC substrate. Limitations in temperature and spatial resolution, and relative advantages of both techniques are discussed. Results are compared to three-dimensional finite-difference simulations
Keywords :
III-V semiconductors; Raman spectroscopy; aluminium compounds; field effect transistors; gallium compounds; heat sinks; infrared imaging; probes; wide band gap semiconductors; AlGaN-GaN; IR imaging; finite-difference simulations; heat sinking; infrared thermography; micro-Raman spectroscopy; monitoring; self-heating; temperature profiles; transistor structures; Aluminum gallium nitride; Gallium nitride; High-resolution imaging; Infrared surveillance; Monitoring; Optical imaging; Probes; Silicon carbide; Spectroscopy; Temperature; FETs; Raman spectroscopy; gallium compounds; infrared (IR) imaging; simulation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.882274
