G-band (140-220-GHz) InP-based HBT amplifiers

Author

Urteaga, Miguel ; Scott, Dennis ; Krishnan, Sundararajan ; Wei, Yun ; Dahlstrom, M. ; Griffith, Zach ; Parthasarathy, Navin ; Rodwell, Mark J.W.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA

Volume

38

Issue

9

fYear

2003

Firstpage

1451

Lastpage

1456

Abstract

We report tuned amplifiers designed for the 140-220-GHz frequency band. The amplifiers were designed in a transferred-substrate InP-based heterojunction bipolar transistor technology that enables efficient scaling of the parasitic collector-base junction capacitance. A single-stage amplifier exhibited 6.3-dB small-signal gain at 175 GHz. Three-stage amplifiers were subsequently fabricated with one design demonstrating 12.0-dB gain at 170 GHz and a second design exhibiting 8.5-dB gain at 195 GHz.

Keywords

III-V semiconductors; bipolar MIMIC; heterojunction bipolar transistors; indium compounds; millimetre wave amplifiers; 12.0 dB; 140 to 220 GHz; 6.3 dB; 8.5 dB; G-band; HBT amplifiers; InP; InP-based technology; parasitic collector-base junction capacitance; scaling; single-stage amplifier; small-signal gain; transferred-substrate technology; tuned amplifiers; Broadband amplifiers; Frequency; HEMTs; Heterojunction bipolar transistors; III-V semiconductor materials; Indium phosphide; MODFETs; Parasitic capacitance; Power amplifiers; Space exploration;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2003.815906

Filename

1225784