Title :
High-power monolithic AlGaN/GaN HEMT oscillator
Author :
Kaper, Valery S. ; Tilak, Vinayak ; Kim, Hyungtak ; Vertiatchikh, Alexei V. ; Thompson, Richard M. ; Prunty, Thomas R. ; Eastman, Lester F. ; Shealy, James R.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
A monolithic X-band oscillator based on an AlGaN/GaN high electron mobility transistor (HEMT) has been designed, fabricated, and characterized. A common-gate HEMT with 1.5 mm of gate width in conjunction with inductive feedback is used to generate negative resistance. A high Q resonator is implemented with a short-circuit low-loss coplanar waveguide transmission line. The oscillator delivers 1.7 W at 9.556 GHz into 50-Ω load when biased at Vds=30 V and Vgs=-5 V, with dc-to-RF efficiency of 16%. Phase noise was estimated to be -87 dBc/Hz at 100-kHz offset. Low-frequency noise, pushing and pulling figures, and time-domain characterization have been performed. Experimental results show great promise for AlGaN/GaN HEMT MMIC technology to be used in future high-power microwave source applications.
Keywords :
HEMT integrated circuits; MMIC oscillators; aluminium compounds; coplanar waveguide components; feedback oscillators; gallium compounds; negative resistance circuits; phase noise; 1.7 W; 16 percent; 9.556 GHz; AlGaN-GaN; AlGaN/GaN; HEMT oscillator; MMIC technology; X-band; gate width; high-power microwave source; inductive feedback; negative resistance; phase noise; short-circuit low-loss coplanar waveguide transmission line; time-domain characterization; Aluminum gallium nitride; Coplanar transmission lines; Coplanar waveguides; Gallium nitride; HEMTs; MODFETs; Negative feedback; Oscillators; Phase estimation; Phase noise;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2003.815934
