Broad-band SiGe MMICs for phased-array radar applications

Author

Tayrani, Reza ; Teshiba, Mary A. ; Sakamoto, Glenn M. ; Chaudhry, Q. ; Alidio, R. ; Kang, Yoosin ; Ahmad, Imad S. ; Cisco, Terry C. ; Hauhe, M.

Author_Institution

Raytheon Space & Airborne Syst., El Segundo, CA, USA

Volume

38

Issue

9

fYear

2003

Firstpage

1462

Lastpage

1470

Abstract

This paper reports the performances of several broad-band monolithic SiGe monolithic microwave integrated circuits (MMICs) suitable for phased-array radar applications. The amplitude and phase control MMIC designs are based on an optimized SiGe p-i-n diode offered by the IBM 5HP SiGe foundry process. Utilizing this diode, several control circuitries including a broad-band (1-20-GHz) monolithic single-pole double-throw switch, a five-port transfer switch, a 6-bit phase shifter, and a 5-bit attenuator, all operating over 7-11 GHz, are designed. Also, the design and performance of an SiGe heterojunction bipolar transistor variable-gain cascode amplifier that combines the functionality of an amplifier and an attenuator into one MMIC is described.

Keywords

Ge-Si alloys; bipolar MMIC; p-i-n diodes; phased array radar; 1 to 20 GHz; 5 bit; 6 bit; 7 to 11 GHz; IBM 5HP foundry process; SiGe; amplitude control MMIC designs; five-port transfer switch; p-i-n diode; phase control MMIC designs; phased-array radar applications; single-pole double-throw switch; variable-gain cascode amplifier; Application specific integrated circuits; Attenuators; Germanium silicon alloys; MMICs; Microwave integrated circuits; P-i-n diodes; Radar applications; Silicon germanium; Switches; Switching circuits;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2003.815933

Filename

1225786