Title :
Effect of phonon scattering on intrinsic delay and cutoff frequency of carbon nanotube FETs
Author :
Yoon, Youngki ; Ouyang, Yijian ; Guo, Jing
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL
Abstract :
The effect of phonon scattering on the intrinsic delay and cutoff frequency of Schottky-barrier carbon nanotube (CNT) FETs (CNTFETs) is examined. Carriers are mostly scattered by optical and zone-boundary phonons beyond the beginning of the channel. It is shown that the scattering has a small direct effect on the dc on current of the CNTFET, but it results in a significant decrease of intrinsic cutoff frequency and increase of intrinsic delay
Keywords :
Schottky barriers; Schottky gate field effect transistors; carbon nanotubes; carrier density; nanotube devices; phonons; Schottky barrier; carbon nanotube FET; cutoff frequency; intrinsic delay; phonon scattering; Acoustic scattering; Coaxial components; Computational modeling; Cutoff frequency; Delay effects; FETs; Nanotubes; Optical scattering; Phonons; Radio frequency; Carbon nanotubes (CNT); high-frequency performance; intrinsic delay; transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.882034
