• DocumentCode
    772563
  • Title

    Product applications and technology directions with SiGe BiCMOS

  • Author

    Joseph, Alvin J. ; Dunn, James ; Freeman, Greg ; Harame, David L. ; Coolbaugh, Doug ; Groves, Rob ; Stein, Kenneth J. ; Volant, Rich ; Subbanna, Seshadri ; Marangos, V.S. ; Onge, Stephen St ; Eshun, Ebenezer ; Cooper, P. ; Johnson, Jeffrey B. ; Rieh, Jae-

  • Author_Institution
    IBM Microelectron. Div., Essex Junction, VT, USA
  • Volume
    38
  • Issue
    9
  • fYear
    2003
  • Firstpage
    1471
  • Lastpage
    1478
  • Abstract
    In this paper, we highlight the effectiveness and flexibility of SiGe BiCMOS as a technology platform over a wide range of performance and applications. The bandgap-engineered SiGe heterojunction bipolar transistors (HBTs) continue to be the workhorse of the technology, while the CMOS offering is fully foundry compatible for maximizing IP sharing. Process customization is done to provide high-quality passives, which greatly enables fully integrated single-chip solutions. Product examples include 40-Gb/s (OC768) components using high-speed SiGe HBTs, power amplifiers compatible for cellular applications, integrated voltage-controlled oscillators, and very high-level mixed-signal integration. It is argued that such key enablements along with the lower cost and higher yields attainable by SiGe BiCMOS technologies will provide competitive solutions for the communication marketplace.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; MMIC oscillators; heterojunction bipolar transistors; mixed analogue-digital integrated circuits; semiconductor materials; voltage-controlled oscillators; 40 Gbit/s; BiCMOS; HBTs; IP sharing; SiGe; cellular applications; integrated voltage-controlled oscillators; mixed-signal integration; process customization; product applications; technology directions; BiCMOS integrated circuits; CMOS technology; Costs; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Microelectronics; Silicon germanium; Space technology; Voltage-controlled oscillators;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2003.815930
  • Filename
    1225787