Title :
Detailed investigation of InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photo-enhanced chemical vapor deposition
Author :
Liu, Biing-Der ; Lee, Si-Chen ; Sun, Tai-Ping ; Yang, Sheng-Jenn
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
5/1/1995 12:00:00 AM
Abstract :
An InSb metal-oxide-semiconductor field effect transistor (MOSFET) with three different channel lengths 5, 15 and 30 μm was fabricated successfully. The SiO2 prepared by photo-enhanced chemical vapor deposition was used both as the gate insulator and the source/drain passivation layer to reduce the source/drain pn junction surface leakage current. The common-source current-voltage characteristics show breakdown voltage exceeding 2 V indicating excellent pn junction reverse characteristics. The capacitance-voltage and the transferred current versus gate voltage characteristics are discussed in detail to explain the geometry effect on the device performance
Keywords :
III-V semiconductors; MOSFET; characteristics measurement; chemical vapour deposition; field effect transistor switches; indium compounds; leakage currents; 2 V; 5 to 30 micron; InSb-SiO2; MOSFET; breakdown voltage; channel lengths; common-source current-voltage characteristics; gate insulator; geometry effect; p-channel metal-oxide-semiconductor field effect transistor; photo-enhanced chemical vapor deposition; pn junction reverse characteristics; source/drain passivation layer; source/drain pn junction; surface leakage current; transferred current; Capacitance-voltage characteristics; Chemical vapor deposition; Current-voltage characteristics; FETs; Geometry; Insulation; Leakage current; MOSFET circuits; Passivation; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
