Title :
Monte-Carlo study of high-frequency, large-signal transport parameters for physics based device simulation
Author :
Schroeder, Werner L. ; Wolff, Ingo
Author_Institution :
Dept. of Electr. Eng., Duisburg Univ., Germany
fDate :
5/1/1995 12:00:00 AM
Abstract :
High-frequency large-signal electron transport properties are studied by Monte-Carlo simulation considering n-GaAs as a model problem. It is demonstrated that the use of steady-state transport parameters is inadequate for simulating device operation at microwave and millimeter wave frequencies. The error of the relaxation time approximation, as commonly used in physics based device modeling, is investigated and possible improvements are indicated. A novel effective large-signal mobility approximation is proposed for simplified transport models in the upper microwave and millimeter wave range
Keywords :
Monte Carlo methods; approximation theory; carrier mobility; carrier relaxation time; microwave devices; millimetre wave devices; semiconductor device models; simulation; GaAs; Monte-Carlo simulation; device modeling; effective large-signal mobility approximation; electron transport properties; high-frequency transport parameters; large-signal transport parameters; microwave frequencies; millimeter wave frequencies; n-type GaAs; physics based device simulation; relaxation time approximation error; steady-state transport parameters; transport models; Computational complexity; Computational modeling; Conducting materials; Electron mobility; Frequency; Hydrodynamics; Microwave devices; Millimeter wave devices; Physics; Steady-state;
Journal_Title :
Electron Devices, IEEE Transactions on
