High optical power nonlinear dynamic response of AlInAs/GaInAs MSM photodiode

Author

Ashour, Iman S. ; Harari, Joseph ; Vilcot, Jean-Pierre ; Decoster, Didier

Author_Institution

Dept. Hyperfrequences et Semicond., Domaine Univ., France

Volume

42

Issue

5

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

828

Lastpage

834

Abstract

In this paper, we introduce a theoretical study and a numerical simulation of the nonlinear electrical response, including the harmonic-generation rate calculation, of an MSM AlInAs/GaInAs photodiode under high-illumination conditions. We also report that, with an MSM operating at 20 GHz, we can expect a saturation limit at a maximum modulated optical power as high as 100 mW

Keywords

III-V semiconductors; aluminium compounds; dynamic response; gallium arsenide; harmonic generation; indium compounds; metal-semiconductor-metal structures; numerical analysis; photodiodes; semiconductor device models; simulation; space charge; 100 mW; 20 GHz; AlInAs-GaInAs; MSM photodiode; harmonic-generation rate calculation; high optical power response; high-illumination conditions; nonlinear dynamic response; nonlinear electrical response; numerical simulation; saturation limit; Electrodes; Fiber nonlinear optics; High speed optical techniques; Nonlinear optics; Optical modulation; Optical receivers; Optical saturation; Photodetectors; Photodiodes; Schottky barriers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.381976

Filename

381976