SiGe differential transimpedance amplifier with 50-GHz bandwidth

Author

Weiner, Joseph S. ; Leven, Andreas ; Houtsma, Vincent ; Baeyens, Yves ; Chen, Young-Kai ; Paschke, Peter ; Yang, Yang ; Frackoviak, John ; Sung, Wei-Jer ; Tate, Alaric ; Reyes, Roberto ; Kopf, Rose F. ; Weimann, Nils G.

Author_Institution

Lucent Technol., Bell Labs., Murray Hill, NJ, USA

Volume

38

Issue

9

fYear

2003

Firstpage

1512

Lastpage

1517

Abstract

InP and SiGe technologies are both attractive for design of circuits operating at 40 GB/s and beyond. In this paper, we describe a fully differential SiGe transimpedance amplifier (TIA) suitable for differential phase-shift keying applications. The TIA exhibits 49 dB-Ω transimpedance, greater than 50-GHz bandwidth, and input-referred current noise less than 30 pA/√Hz. For comparison, we have also developed a similar TIA in an InP double-heterostructure bipolar transistor technology. The InP TIA had 48 dB-Ω transimpedance and 49-GHz bandwidth.

Keywords

Ge-Si alloys; differential amplifiers; differential phase shift keying; semiconductor materials; 40 Gbit/s; 50 GHz; InP; InP double heterostructure bipolar transistor; SiGe; SiGe differential transimpedance amplifier; differential phase shift keying; Bandwidth; Delay; Differential amplifiers; Differential quadrature phase shift keying; Germanium silicon alloys; Indium phosphide; Optical amplifiers; Optical pulses; Pulse amplifiers; Silicon germanium;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2003.815969

Filename

1225792