Investigation of programming charge distribution in nonoverlapped implantation nMOSFETs

Author

Jeng, Erik S. ; Kuo, Pai-Chun ; Hsieh, Chien-Sheng ; Fan, Chen-Chia ; Lin, Kun-Ming ; Hsu, Hui-Chun ; Chou, Wu-Ching

Author_Institution

Dept. of Electron. Eng., Chun-Yuan Christian Univ., Chun-Li

Volume

53

Issue

10

fYear

2006

Firstpage

2517

Lastpage

2524

Abstract

Novel gate-to-drain nonoverlapped-implantation (NOI) nMOSFETs have been developed as potential multibit-per-cell nonvolatile-memory (NVM) devices. The lateral charge distribution of the NOI NVM device programmed by channel hot electron injection is investigated by charge-pumping (CP) techniques with presumed interface trap distributions. For the first time, the CP results have revealed the lateral charge distribution and trapping density at the NOI´s programmed state. The maximum trapping charge density locates near its drain junction. The charge distribution is estimated about 90 nm in length and spread widely over the NOI region. Two-dimensional simulators with charge bars using the same charge trapping distribution confirm the experimental results by fitting their I_DS-V_G curves

Keywords

MOSFET; carrier density; charge injection; electron traps; hot electron transistors; ion implantation; semiconductor storage; 2D simulators; CHEI; CP techniques; NOI; NVM devices; channel hot electron injection; charge-pumping; drain junction; gate-to-drain nonoverlapped-implantation; interface trap distributions; multibit-per-cell nonvolatile-memory; nMOSFET; programming charge distribution; CMOS process; Channel hot electron injection; Charge pumps; Electron traps; Hot carriers; Interface states; MOSFETs; Nonvolatile memory; Silicon compounds; Voltage; Channel hot electron injection (CHEI); charge-pumping; nonoverlapped implantation (NOI); nonvolatile memory (NVM);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.882044

Filename

1705103