Title :
A direct-conversion receiver IC for WCDMA mobile systems
Author :
Reynolds, Scott K. ; Floyd, Brian A. ; Beukema, Troy ; Zwick, Thomas ; Pfeiffer, Ullrich ; Ainspan, Herschel
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A prototype design of a 2.7-3.3-V 14.5-mA SiGe direct-conversion receiver IC for use in third-generation wide-band code-division multiple-access (3G WCDMA) mobile cellular systems has been completed and measured. The design includes a bypassable low-noise amplifier (LNA), a quadrature downconverter, a local-oscillator frequency divider and quadrature generator, and variable-gain baseband amplifiers integrated on chip. The design achieves a cascaded, LNA-referred noise figure (including an interstage surface acoustic wave filter) of 4.0 dB, an in-band IIP3 of -18.6 dBm, and local-oscillator leakage at the LNA input of -112 dBm. The static sensitivity performance of the receiver IC is characterized using a software baseband processor to compute link bit-error rate.
Keywords :
3G mobile communication; BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; UHF integrated circuits; cellular radio; code division multiple access; microwave receivers; 1.9 to 2.3 GHz; 14.5 mA; 2.7 to 3.3 V; 4.0 dB; BiCMOS; RFIC; SiGe; SiGe direct-conversion receiver IC; WCDMA mobile systems; bypassable low-noise amplifier; cascaded LNA-referred noise figure; direct conversion; in-band IIP3; interstage surface acoustic wave filter; land mobile radio cellular systems; link bit-error rate; local-oscillator frequency divider; local-oscillator leakage; quadrature downconverter; quadrature generator; software baseband processor; static sensitivity performance; third-generation wide-band code-division multiple-access mobile cellular systems; variable-gain baseband amplifiers; Acoustic measurements; Baseband; Frequency conversion; Germanium silicon alloys; Low-noise amplifiers; Multiaccess communication; Prototypes; Semiconductor device measurement; Silicon germanium; Wideband;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2003.815914