Noise modeling of microwave heterojunction bipolar transistors

Author

Escotte, Laurent ; Roux, Jean-Phillippe ; Plana, Robert ; Graffeuil, Jacques ; Gruhle, Andreas

Author_Institution

Univ. Paul Sabatier, Toulouse, France

Volume

42

Issue

5

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

883

Lastpage

889

Abstract

Analytical expressions of microwave heterojunction bipolar transistors minimum noise figure and noise parameter are reported in this paper. These expressions are derived from a noise model including nonideal junctions, emitter and base resistances and have been compared with measured data obtained on a Si-SiGe HBT. An agreement between theoretical and experimental data was as observed up to 20 GHz for several bias conditions. The limits of the model or the range of validity of the proposed equations have been also examined with the help of an appropriate CAD software. The analysis of the influence of parasitic elements on noise parameters has shown a strong influence of the extrinsic base collector capacitance at microwave frequencies

Keywords

capacitance; equivalent circuits; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device models; semiconductor device noise; 20 GHz; Si-SiGe; base resistance; bias conditions; emitter resistance; extrinsic base collector capacitance; heterojunction bipolar transistors; microwave HBT; microwave frequencies; minimum noise figure; noise modeling; noise parameters; nonideal junctions; parasitic elements; Bipolar transistors; Circuit noise; Electrical resistance measurement; Equivalent circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave frequencies; Noise figure; Noise measurement; Silicon germanium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.381984

Filename

381984