Numerical simulation of submicrometer devices including coupled nonlocal transport and nonisothermal effects

Stratton´s energy balance model for nonlocal charge transport in semiconductors is extended to include the effects of heterojunctions and lattice heating. The extended model is implemented in a general purpose 2D device simulator. Calculated results are presented for three device types and each of four models. The devices are a silicon BJT, a silicon SOI transistor, and a GaAs/AlGaAs HBT. The models are isothermal drift-diffusion, nonisothermal drift-diffusion, isothermal energy balance, and nonisothermal energy balance. Analysis of these results provides detailed insights into the impact of the coupling between carrier transport and lattice heating