SiGe W-CDMA transmitter for mobile terminal application

Author

Malhi, Duljit S. ; Larson, Lawrence E. ; Wang, Dawn ; Demirdag, Cuneyt ; Pereira, Victoria

Author_Institution

TriQuint Semicond., Lowell, MA, USA

Volume

38

Issue

9

fYear

2003

Firstpage

1570

Lastpage

1574

Abstract

This paper presents the design considerations and experimental results of a transmitter integrated circuit (IC) for wide-band code division multiple access (W-CDMA) mobile terminal application based on a superheterodyne architecture. Implemented by utilizing IBM´s 0.5-μm SiGe BiCMOS technology, the transmitter IC consumes approximately 270 mW with a 3.0-V power supply. The radio-frequency IC features a third-order output intercept point (OIP3) of +25.0 dBm, a 95-dB dynamic range, and 6.3% error vector magnitude.

Keywords

3G mobile communication; BiCMOS integrated circuits; Ge-Si alloys; UHF integrated circuits; automatic gain control; baluns; cellular radio; code division multiple access; radio transmitters; 0.5 micron; 270 mW; 3.0 V; 3G cellular systems; IBM SiGe BiCMOS technology; OIP3; SiGe; SiGe W-CDMA transmitter; automatic gain control; baluns; design considerations; dynamic range; error vector magnitude; mobile terminal application; radio-frequency IC; superheterodyne architecture; third-order output intercept point; transmitter integrated circuit; wide-band code division multiple access; Application specific integrated circuits; BiCMOS integrated circuits; Germanium silicon alloys; Integrated circuit technology; Multiaccess communication; Power supplies; Radio frequency; Radio transmitters; Silicon germanium; Wideband;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2003.815908

Filename

1225801