A 16-GHz ultra-high-speed Si-SiGe HBT comparator

Author

Jensen, Jonathan C. ; Larson, Lawrence E.

Author_Institution

Intel Corp., San Diego, CA, USA

Volume

38

Issue

9

fYear

2003

Firstpage

1584

Lastpage

1589

Abstract

This paper presents an improved master-slave bipolar Si-SiGe HBT comparator design for ultra-high-speed data converter applications. The latch is maintained during the track stage facilitating quick transition back to the latch stage, increasing the sampling speed of the comparator. Implemented in a 0.5-μm 55-GHz BiCMOS Si-SiGe process, this comparator consumes approximately 80 mW with sampling speeds up to 16 GHz.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; analogue-digital conversion; comparators (circuits); heterojunction bipolar transistors; high-speed integrated circuits; sample and hold circuits; silicon; 0.5 micron; 16 GHz; 16-GHz ultra-high-speed Si-SiGe HBT comparator; 55 GHz; 80 mW; BiCMOS Si-SiGe process; Si-SiGe; analog-digital conversion; latch stage; master-slave bipolar Si-SiGe RBT comparator design; sample-and-hold circuits; sampling speed; track stage; ultra-high-speed data converter; Analog integrated circuits; Bandwidth; Bipolar integrated circuits; Clocks; Frequency conversion; Heterojunction bipolar transistors; High speed integrated circuits; Latches; Sampling methods; Wireless communication;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2003.815913

Filename

1225803