Fabrication and characterisation of transparent-gate field effect transistors using indium tin oxide

Author

Khalid, A.H. ; Rezazadeh, A.A.

Author_Institution

Dept. of Electron. & Electr. Eng., Kings Coll., London, UK

Volume

143

Issue

1

fYear

1996

fDate

2/1/1996 12:00:00 AM

Firstpage

7

Lastpage

11

Abstract

Ion-implanted GaAs MESFETs with transparent indium oxide (ITO) gate electrodes have been fabricated using both sputtered and evaporated ITO gates. High-quality ITO films with transparency greater than 90% and low sheet resistance of 8Ω/□ have been used in the fabrication of RF sputtered transparent gates. Transparent-gate FETs have also been fabricated using thermally evaporated ITO which have shown excellent electrical device performance comparable to the conventional GaAs MESFET. The optical responsivity of these devices is about 4.5 A/W for a radiation wavelength of 6328 Å. Fabrication details are also discussed for optoelectronic devices with transparent electrodes where the fine-structure processing are not compatible with standard lithography techniques

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; ion implantation; microwave field effect transistors; optical fabrication; phototransistors; sputter deposition; tin compounds; 6328 angstrom; GaAs; GaAs MESFETs; ITO; ITO gates; InSnO; RF sputtered transparent gates; electrical device performance; fabrication; fine-structure processing; ion-implanted transistors; lithography techniques; optical responsivity; optoelectronic devices; sheet resistance; transparency; transparent electrodes; transparent-gate field effect transistors;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:19960083

Filename

487668