Title :
Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN BJT´s
Author :
Wei, A. ; Kosier, S.L. ; Schrimpf, R.D. ; Combs, W.E. ; DeLaus, M.
Author_Institution :
Microsystems Technol. Lab., MIT, Cambridge, MA, USA
fDate :
5/1/1995 12:00:00 AM
Abstract :
Excess collector current in irradiated NPN BJT´s is linked to an oxide-trapped-charge-induced inversion layer acting as an additional emitter. Excess collector current is modeled by interpreting the inversion layer as an extension of the emitter
Keywords :
bipolar transistors; inversion layers; radiation effects; semiconductor device models; additional emitter; excess collector current; inversion layer; irradiated NPN BJTs; oxide-trapped-charge-induced emitter; Associate members; Automatic logic units; Contracts; Current measurement; Degradation; Gain measurement; Helium; Ionizing radiation; Laboratories; Nuclear electronics;
Journal_Title :
Electron Devices, IEEE Transactions on
