A comprehensive study of bistable gated bipolar device

Author

Cheng, Xu ; Duane, Russell

Author_Institution

Tyndall Nat. Inst., Univ. Coll. Cork

Volume

53

Issue

10

fYear

2006

Firstpage

2589

Lastpage

2597

Abstract

Bistable gated bipolar (BGB) devices, a novel negative differential resistance (NDR) device, is investigated in this paper. Experimental demonstration for both n-channel and p-channel devices is carried out in a partially depleted silicon-on-insulator technology. The temperature dependence of its NDR characteristics is measured and found to be in good agreement with analytical models. A feasible scheme is proposed to implement this device in scaled CMOS technologies. As the basic principle for applications, the measured hysteresis characteristic of a storage cell utilizing the BGB device is reported for the first time. Potential applications for logic and memory are also discussed

Keywords

CMOS integrated circuits; bipolar transistors; negative resistance devices; semiconductor device models; silicon-on-insulator; MOS devices; bistable gated bipolar device; depleted silicon-on-insulator; hysteresis; logic; memory; n-channel devices; negative differential resistance device; p-channel devices; storage cell; CMOS logic circuits; CMOS memory circuits; CMOS process; CMOS technology; Electrical resistance measurement; Hysteresis; Immune system; Logic devices; Temperature dependence; Voltage; MOS devices; negative resistance devices;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.882391

Filename

1705114