Title :
Two-stage hot-carrier degradation and its impact on submicrometer LDD NMOSFET lifetime prediction
Author :
Chan, Vei-Han ; Chung, James E.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
fDate :
5/1/1995 12:00:00 AM
Abstract :
The device degradation of oxide-spacer LDD NMOSFET´s due to hot carriers is studied in detail. The observed saturation in the degradation time dependence is found to be due to a combination of an increase in the series resistance in the lightly doped drain region, and a reduction of the carrier mobility in the channel and subdiffusion regions. The increase in series resistance eventually saturates. Thus, a more accurate and consistent value of LDD NMOSFET lifetime can be determined using extrapolations which are based on the asymptotic value of the degradation rate coefficient
Keywords :
MOSFET; carrier mobility; hot carriers; semiconductor device reliability; semiconductor device testing; asymptotic value; carrier mobility; channel region; degradation rate coefficient; degradation time dependence; lifetime prediction; lightly doped drain region; series resistance; subdiffusion region; submicrometer LDD NMOSFET; two-stage hot-carrier degradation; Charge pumps; Computer aided manufacturing; Current measurement; Degradation; Extrapolation; Hot carriers; MOSFET circuits; Space technology; Stress; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
