Two-stage hot-carrier degradation and its impact on submicrometer LDD NMOSFET lifetime prediction

Author

Chan, Vei-Han ; Chung, James E.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

Volume

42

Issue

5

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

957

Lastpage

962

Abstract

The device degradation of oxide-spacer LDD NMOSFET´s due to hot carriers is studied in detail. The observed saturation in the degradation time dependence is found to be due to a combination of an increase in the series resistance in the lightly doped drain region, and a reduction of the carrier mobility in the channel and subdiffusion regions. The increase in series resistance eventually saturates. Thus, a more accurate and consistent value of LDD NMOSFET lifetime can be determined using extrapolations which are based on the asymptotic value of the degradation rate coefficient

Keywords

MOSFET; carrier mobility; hot carriers; semiconductor device reliability; semiconductor device testing; asymptotic value; carrier mobility; channel region; degradation rate coefficient; degradation time dependence; lifetime prediction; lightly doped drain region; series resistance; subdiffusion region; submicrometer LDD NMOSFET; two-stage hot-carrier degradation; Charge pumps; Computer aided manufacturing; Current measurement; Degradation; Extrapolation; Hot carriers; MOSFET circuits; Space technology; Stress; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.381994

Filename

381994