Title :
A direct method for the extraction of diffusion length and surface recombination velocity from an EBIC line scan: planar junction configuration
Author :
Chan, Daniel S H ; Ong, Vincent K.S. ; Phang, Jacob C H
Author_Institution :
Fac. of Eng., Nat. Univ. of Singapore, Singapore
fDate :
5/1/1995 12:00:00 AM
Abstract :
A direct method of extracting bulk minority carrier diffusion length and surface recombination velocity from an EBIC line scan in the planar configuration is described. The accuracy of the method is verified by 3-D computer simulation and compared with existing methods. It mas found that this method is much simpler to use and gives better accuracy than existing methods
Keywords :
EBIC; carrier lifetime; electron-hole recombination; minority carriers; p-n junctions; surface recombination; 3D computer simulation; EBIC line scan; diffusion length; minority carrier; p-n junctions; planar junction configuration; surface recombination velocity; Computer simulation; Failure analysis; Gaussian distribution; Helium; Integrated circuit reliability; Jacobian matrices; Linear regression; P-n junctions; Reliability engineering; Schottky diodes;
Journal_Title :
Electron Devices, IEEE Transactions on
