DocumentCode
772863
Title
Thick Junctions Made with Nuclear Compensated Silicon
Author
Messier, J. ; Le Coroller, Y. ; Flores, J.Merlo
Author_Institution
Service d´´Electronique Physique - Centre d´´Etudes Nucl?aires de Saclay (S. et O.) France
Volume
11
Issue
3
fYear
1964
fDate
6/1/1964 12:00:00 AM
Firstpage
276
Lastpage
279
Abstract
It is known that making detectors with great depletion depth is related to the availability of high resistivity Si, generally obtained by compensation. We have experimented a new compensating technique, based on the production of P-31, in situ, by nuclear transmutation of Si by thermal neutrons. After annealing, very high resistivity Si (200 000 ¿. cm at 300° K) has been obtained by this method. NIP structures with great depletion depth obtained by nuclear compensation are described, as an example of the possibilities of this new technique.
Keywords
Annealing; Availability; Boron; Charge carrier density; Detectors; Hall effect; Neutrons; Production; Silicon; Thermal conductivity;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1964.4323434
Filename
4323434
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