Longitudinal mode control in 1.3 μm Fabry-Perot lasers by mode suppression

Author

Kozlowski, D.A. ; Young, J.S. ; England, J.M.C. ; Plumb, R.G.S.

Author_Institution

Dept. of Eng., Cambridge Univ., UK

Volume

143

Issue

1

fYear

1996

fDate

2/1/1996 12:00:00 AM

Firstpage

71

Lastpage

76

Abstract

Localised reflections within the lasing filament of Fabry-Perot lasers cause spectral perturbations. Focused Ga⁺ ion beam etching can be used to form steep walled pits of submicron size in the lasing filament which give rise to localised reflections with minimal rises in threshold current. Control of both position and depth enables one to sculpture the modal envelope so as to form single mode Fabry-Perot lasers with 30 dB of mode suppression and stability with temperature over 30°C with an increase in threshold current of a few milliamps. The authors also report the appearance of an enhanced single spectral line below threshold. Modelling results show that an effective reflectivity can be allocated to the etched pit, and this is an order of magnitude below the cleaved facet reflectivity

Keywords

Fabry-Perot resonators; focused ion beam technology; laser cavity resonators; laser modes; optical fabrication; optical losses; semiconductor lasers; sputter etching; 1.3 mum; 30 C; Fabry-Perot lasers; cleaved facet reflectivity; effective reflectivity; enhanced single spectral line; etched pit; ion beam etching; lasing filament; localised reflections; longitudinal mode control; modal envelope; mode suppression; single mode Fabry-Perot lasers; spectral perturbations; steep walled pits; submicron size; threshold current;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:19960143

Filename

487679