Title :
Influence of the oxide-charge distribution profile on electron mobility in MOSFET´s
Author :
Gámiz, F. ; López-Villanueva, J.A. ; Banqueri, J. ; Carceller, J.E.
Author_Institution :
Dept. de Electron. y Tecnologia de Computadores, Granada Univ., Spain
fDate :
5/1/1995 12:00:00 AM
Abstract :
To characterize the effect of oxide-charge distribution on electron mobility in a MOSFET channel, a more precise method for obtaining the oxide-charge profile than CV measurement is needed. We have shown by Monte Carlo simulation that the effective interface-charge concentration obtained from threshold voltage measurements does not reproduce the actual effect that the oxide charge has on electron mobility. It is therefore absolutely necessary to know the real profile of the charge distribution. An analytical expression to obtain the interface-charge concentration which correctly models the effect of the actual oxide-charge distribution is calculated from Monte Carlo results
Keywords :
Boltzmann equation; MOSFET; Monte Carlo methods; carrier density; carrier mobility; semiconductor device models; MOSFETs; Monte Carlo simulation; electron mobility; interface-charge concentration; oxide-charge distribution profile; Charge measurement; Current measurement; Degradation; Electron mobility; MOS devices; MOSFET circuits; Monte Carlo methods; Predictive models; Threshold voltage; Voltage measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
