Influence of the oxide-charge distribution profile on electron mobility in MOSFET´s

Author

Gámiz, F. ; López-Villanueva, J.A. ; Banqueri, J. ; Carceller, J.E.

Author_Institution

Dept. de Electron. y Tecnologia de Computadores, Granada Univ., Spain

Volume

42

Issue

5

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

999

Lastpage

1004

Abstract

To characterize the effect of oxide-charge distribution on electron mobility in a MOSFET channel, a more precise method for obtaining the oxide-charge profile than CV measurement is needed. We have shown by Monte Carlo simulation that the effective interface-charge concentration obtained from threshold voltage measurements does not reproduce the actual effect that the oxide charge has on electron mobility. It is therefore absolutely necessary to know the real profile of the charge distribution. An analytical expression to obtain the interface-charge concentration which correctly models the effect of the actual oxide-charge distribution is calculated from Monte Carlo results

Keywords

Boltzmann equation; MOSFET; Monte Carlo methods; carrier density; carrier mobility; semiconductor device models; MOSFETs; Monte Carlo simulation; electron mobility; interface-charge concentration; oxide-charge distribution profile; Charge measurement; Current measurement; Degradation; Electron mobility; MOS devices; MOSFET circuits; Monte Carlo methods; Predictive models; Threshold voltage; Voltage measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.381999

Filename

381999