Title :
Influence of contacts on the hold-off voltage and recovery of electron-beam activated gallium arsenide switches
Author :
Kennedy, M.K. ; Brinkmann, R.P. ; Schoenbach, K.H.
Author_Institution :
Phys. Electron. Res. Inst., Old Dominion Univ., Norfolk, VA, USA
fDate :
5/1/1995 12:00:00 AM
Abstract :
The dark current, the current gain, and the recovery behavior of electron-beam controlled gallium arsenide bulk switches was measured for various contact configurations. With non-injecting contacts, the pulsed hold-off voltage and the threshold voltage for current lock-on was found to be higher by more than a factor of 3, compared to systems with injecting contacts. Additionally, the switch gain could be increased by a factor of 3 by doping the electron-beam irradiated face of the switch with zinc
Keywords :
III-V semiconductors; electron beam applications; gallium arsenide; semiconductor switches; GaAs; bulk switches; contact configurations; current gain; dark current; electron-beam activated switches; electron-beam irradiated face; hold-off voltage; noninjecting contacts; recovery; switch gain; threshold voltage; Contacts; Gallium arsenide; High speed optical techniques; Laser radar; Optical pulse generation; Optical pulse shaping; Optical switches; Power semiconductor switches; Semiconductor lasers; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
