Title :
Multiwavelength InGaAs/InGaAsP strained-layer MQW-laser array using shadow-masked growth
Author :
Coudenys, G. ; Moerman, I. ; Zhu, Y. ; Van Daele, Peter ; Demeester, P.
Author_Institution :
Gent Univ., Belgium
fDate :
6/1/1992 12:00:00 AM
Abstract :
A simple technique for fabricating multiwavelength laser arrays is presented. The lateral variations in bandgap (or emission wavelength) between the different lasers are obtained by the use of shadow-masked growth. The shadow masked growth results in variations in thickness (and to a lesser extent, in composition) over the substrate. In combination with a multiquantum well (MQW) active region, this gives the required bandgap variations. By varying the window width in the shadow mask between 10 mu m and >500 mu m it was possible to obtain a wavelength span of 130 nm centered around 1.55 mu m. The strained-layer-ridge MQW Fabry-Perot lasers showed a constant threshold current (around 70 mA for an 11- mu m*500- mu m stripe).<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical workshop techniques; semiconductor growth; semiconductor laser arrays; 1.55 micron; 10 to 500 micron; IR; InGaAs-InGaAsP; bandgap; composition; constant threshold current; emission wavelength; laser diode fabrication; multiquantum well; multiwavelength laser arrays; semiconductor growth; shadow-masked growth; strained-layer MQW-laser array; strained-layer-ridge MQW Fabry-Perot lasers; substrate; thickness; wavelength span; window width; Fabry-Perot; Fiber lasers; Indium gallium arsenide; Indium phosphide; Optical arrays; Optical device fabrication; Photonic band gap; Quantum well devices; Quantum wells; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
