Multiwavelength InGaAs/InGaAsP strained-layer MQW-laser array using shadow-masked growth

Author

Coudenys, G. ; Moerman, I. ; Zhu, Y. ; Van Daele, Peter ; Demeester, P.

Author_Institution

Gent Univ., Belgium

Volume

4

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

524

Lastpage

526

Abstract

A simple technique for fabricating multiwavelength laser arrays is presented. The lateral variations in bandgap (or emission wavelength) between the different lasers are obtained by the use of shadow-masked growth. The shadow masked growth results in variations in thickness (and to a lesser extent, in composition) over the substrate. In combination with a multiquantum well (MQW) active region, this gives the required bandgap variations. By varying the window width in the shadow mask between 10 mu m and >500 mu m it was possible to obtain a wavelength span of 130 nm centered around 1.55 mu m. The strained-layer-ridge MQW Fabry-Perot lasers showed a constant threshold current (around 70 mA for an 11- mu m*500- mu m stripe).<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical workshop techniques; semiconductor growth; semiconductor laser arrays; 1.55 micron; 10 to 500 micron; IR; InGaAs-InGaAsP; bandgap; composition; constant threshold current; emission wavelength; laser diode fabrication; multiquantum well; multiwavelength laser arrays; semiconductor growth; shadow-masked growth; strained-layer MQW-laser array; strained-layer-ridge MQW Fabry-Perot lasers; substrate; thickness; wavelength span; window width; Fabry-Perot; Fiber lasers; Indium gallium arsenide; Indium phosphide; Optical arrays; Optical device fabrication; Photonic band gap; Quantum well devices; Quantum wells; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.141954

Filename

141954