Title :
Validity range estimate of the asymptotic expansion approach for the modeling of minority-carrier injection into heavily doped emitters
Author :
Rinaldi, Niccoòlb
Author_Institution :
Dept. of Eelctron. Eng., Naples Univ., Italy
fDate :
5/1/1995 12:00:00 AM
Abstract :
A detailed analysis of the accuracy of the asymptotic expansion approach is carried out. A simple methodology for an accurate evaluation of the validity range of the approximate expressions for the calculation of the current injected into heavily doped semiconductor regions is presented. The validity range can be set as a function of the desired accuracy
Keywords :
bipolar transistors; heavily doped semiconductors; minority carriers; semiconductor device models; asymptotic expansion approach; bipolar transistors; heavily doped emitters; minority-carrier injection; modeling; validity range; Analytical models; Councils; Current density; Doping profiles; Microelectronics; Polynomials; Shape; Taylor series; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
