Title :
Intrinsic equivalent circuit of quantum-well lasers
Author :
Kan, Sidney C. ; Lau, Kam Y.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
6/1/1992 12:00:00 AM
Abstract :
An intrinsic equivalent circuit of quantum-well lasers that takes the capture of carriers into the quantum well into account is presented. Several qualitative features in the modulation response and the device impedance are revealed. The dependences on the carrier capture and escape rates are discussed.<>
Keywords :
carrier mobility; equivalent circuits; laser theory; semiconductor device models; semiconductor junction lasers; carrier capture; carrier escape rates; device impedance; intrinsic equivalent circuit; modulation response; quantum-well lasers; Carrier confinement; Charge carrier density; Equations; Equivalent circuits; Laser modes; Laser noise; Quantum capacitance; Quantum well lasers; Semiconductor lasers; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
