The sublinear relationship between index change and carrier density in 1.5 and 1.3 mu m semiconductor lasers

Author

Shin, S. ; Su, C.B.

Author_Institution

Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA

Volume

4

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

534

Lastpage

537

Abstract

The carrier-induced index change was measured using a novel injection-reflection technique in combination with differential carrier lifetime data. The observed relation between index change and injected carrier density at bandgap wavelength is nonlinear and is approximately given by delta n/sub act/=-6.1*10/sup -14/ (N)/sup 0.66/ for a 1.5- mu m laser and delta n/sub act/=-1.3*10/sup -14/ (N)/sup 0.68/ for a 1.3- mu m laser. The carrier-induced index change for a 1.3- mu m laser at 1.53- mu m wavelength is smaller and is given by delta n/sub act/=-9.2*10/sup -16/ (N)/sup 0.72/.<>

Keywords

carrier density; refractive index; semiconductor junction lasers; 1.3 micron; 1.5 micron; 1.53 micron; IR sources; bandgap wavelength; carrier-induced index change; differential carrier lifetime data; diode lasers; injected carrier density; injection-reflection technique; nonlinear; reflectometry; semiconductor lasers; sublinear relationship; Charge carrier density; Distributed feedback devices; Laser excitation; Laser feedback; Laser modes; Laser theory; Laser transitions; Pump lasers; Semiconductor lasers; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.141958

Filename

141958