Title :
Wavelength dependence of noise figure in InGaAs/InGaAsP multiple-quantum-well laser amplifier
Author :
Jepsen, K.S. ; Mikkelsen, B. ; Povlsen, J.H. ; Yamaguchi, M. ; Stubkjaer, K.E.
Author_Institution :
Electromagn. Inst., Tech. Univ. of Denmark, Lyngby, Denmark
fDate :
6/1/1992 12:00:00 AM
Abstract :
Theoretical and experimental results are presented for the wavelength dependence of the noise figure and the single-pass gain in multiquantum well amplifiers. The theoretical model accounts for both conduction band/heavy hole band and conduction band/light-hole band transitions. The calculations are in good agreement with the experimental results, which indicate that the noise figure has some dependence on the wavelength. A minimum traveling-wave amplifier (TWA) noise figure of 3.9 dB has been measured at 1550 nm for a single-pass of 22 dB.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor junction lasers; 1550 nm; 22 dB; IR; InGaAs-InGaAsP; MQW; conduction band; heavy hole band; light-hole band transitions; minimum traveling-wave amplifier; multiple-quantum-well laser amplifier; noise figure; semiconductor laser diodes; single-pass gain; wavelength dependence; Electrons; Indium gallium arsenide; Laser noise; Noise figure; Optical amplifiers; Optical noise; Pump lasers; Quantum well devices; Semiconductor laser arrays; Solid lasers;
Journal_Title :
Photonics Technology Letters, IEEE
