DocumentCode
773064
Title
Saturable absorber intensity modulator
Author
Guina, Mircea D. ; Vainionpää, Anne-Maria ; Orsila, Lasse ; Härkönen, Antti ; Lyytikäinen, Jari ; Gomes, Luís A. ; Okhotnikov, O.G.
Author_Institution
Optoelectronics Res. Centre, Tampere Univ. of Technol., Finland
Volume
39
Issue
9
fYear
2003
Firstpage
1143
Lastpage
1149
Abstract
We propose and demonstrate a reflection-type optical modulator, with surface-normal architecture that exploits saturation of absorption in semiconductor quantum wells pumped optically. The modulation section, composed of quantum wells placed within a Fabry-Perot cavity, is exposed to an intensity-modulated beam generated by an in-plane laser integrated monolithically on the same wafer. Since the modulation section and the in-plane laser share the same medium, an efficient coupling between the control beam and the signal beam is achieved. Design guidelines and device performance are presented. We demonstrate that the modulator provides an efficient light modulation mechanism that is sufficient to actively mode-lock an erbium-doped fiber laser.
Keywords
Fabry-Perot resonators; electro-optical modulation; fibre lasers; integrated optoelectronics; laser cavity resonators; laser mode locking; optical saturable absorption; semiconductor quantum wells; Fabry-Perot cavity; control beam; efficient light modulation mechanism; erbium-doped fiber laser mode locking; in-plane laser; intensity-modulated beam; modulation section; monolithically integrated lasers; reflection-type optical modulator; saturable absorber intensity modulator; signal beam; surface-normal architecture semiconductor quantum wells; Erbium-doped fiber lasers; Intensity modulation; Laser beams; Laser mode locking; Optical modulation; Optical pumping; Optical saturation; Pump lasers; Quantum well lasers; Semiconductor lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2003.816101
Filename
1225834
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