Title :
+21 dBm erbium power amplifier pumped by a diode-pumped Nd:YAG laser
Author :
Grubb, S.G. ; Humer, W.F. ; Cannon, R.S. ; Windhorn, T.H. ; Vendetta, S.W. ; Sweeney, K.L. ; Leilabady, P.A. ; Barnes, W.L. ; Jedrzejewski, K.P. ; Townsend, J.E.
Author_Institution :
Amoco Technol. Co., Naperville, IL, USA
fDate :
6/1/1992 12:00:00 AM
Abstract :
Efficient energy transfer has been demonstrated in an Er/Yb codoped phosphorus-doped silica fiber for the first time. This has indirectly allowed the use of reliable, high-power AlGaAs diode laser arrays as the semiconductor pump source through the use of a diode-pumped Nd:YAG laser (DPL) operating at 1064 nm. Small signal gains of 42 dB and output powers of 71 mW (+18.5 dBm) have been observed with a single DPL. Bidirectional pumping with two DPLs has yielded an output power of 130 mW (+21 dBm).<>
Keywords :
erbium; fibre lasers; neodymium; optical pumping; solid lasers; ytterbium; 1064 nm; 130 mW; 42 dB; 71 mW; AlGaAs; Er doped power laser fibre amplifier; Er/sup 3+/-Yb/sup 3+/ codoped phosphorous doped silica fibre; IR; P/sub 2/O/sub 5/-SiO/sub 2/:Er/sup 3+/, Yb/sup 3+/; YAG:Nd; YAl5O12:Nd; bidirectional pumping; diode-pumped Nd:YAG laser; energy transfer; high-power AlGaAs diode laser arrays; output power; semiconductor pump source; small signal gains; Energy exchange; Erbium; Erbium-doped fiber amplifier; Page description languages; Power amplifiers; Power generation; Semiconductor device reliability; Semiconductor diodes; Semiconductor laser arrays; Silicon compounds;
Journal_Title :
Photonics Technology Letters, IEEE
