Double-heterostructure AlGaAs/GaAs lasers grown on the mesas of trenched Si substrate by molecular beam epitaxy

Author

Liu, Xindong ; Lee, Henry P ; Wang, Shuhui

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

26

Issue

9

fYear

1990

fDate

4/26/1990 12:00:00 AM

Firstpage

590

Lastpage

592

Abstract

The growth and device characteristics of stripe Al_0.26Ga_0.74As/GaAs double-heterostructure lasers grown on mesas of trenched Si by MBE is reported. The TE and TM modes lase at different injection levels depending on the laser stripe width. This behaviour is attributed to the variation of the residual thermal stress present in the laser structures as a function of stripe width. By comparing the polarisations of the laser radiations from a narrow and broad stripe laser, it is found that a narrow mesa is effective in reducing the residual thermal stress.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; thermal stresses; AlGaAs-GaAs; DH lasers; MBE; Si; TE modes; TM modes; device characteristics; injection levels; laser radiations; laser stripe width; molecular beam epitaxy; narrow mesa; polarisations; residual thermal stress; semiconductor lasers;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19900387

Filename

48773