Title :
GaAs/Al/sub x/Ga/sub 1-x/As superlattice waveguide absorption modulators with very low drive voltage
Author :
Moretti, A.L. ; Vezzetti, D.J. ; Chambers, F.A. ; Stair, K.A. ; Devane, G.P.
Author_Institution :
Amoco Technol. Co., Naperville, IL, USA
fDate :
6/1/1992 12:00:00 AM
Abstract :
The first GaAs/Al/sub x/Ga/sub 1-x/As superlattice waveguide absorption modulators operating at approximately 860 nm that utilize the Wannier-Stark effect are reported. The n=-1 Stark ladder peak, which is the transition from the valence band well to the nearest neighbor conduction band well, is used. This peak shifts rapidly with applied electric field, resulting in drive voltages lower than can be achieved using the quantum-confined Stark effect for quantum-well waveguides of similar structure. For a 1000- mu m-long waveguide at 867 nm, the authors obtain an extinction ratio of approximately 20 dB and a 4-dB attenuation with a drive voltage of 2 V.<>
Keywords :
III-V semiconductors; Stark effect; aluminium compounds; electro-optical devices; gallium arsenide; light absorption; optical modulation; optical waveguides; semiconductor superlattices; 1000 micron; 2 V; 860 nm; 867 nm; GaAs-AlGaAs; IR; Stark ladder peak; Wannier-Stark effect; applied electric field; extinction ratio; nearest neighbor conduction band well; quantum-well waveguides; semiconductor superlattices; superlattice waveguide absorption modulators; valence band; very low drive voltage; Absorption; Attenuation; Extinction ratio; Gallium arsenide; Low voltage; Nearest neighbor searches; Page description languages; Quantum wells; Stark effect; Superlattices;
Journal_Title :
Photonics Technology Letters, IEEE
