Title :
High-speed photodetection in a reverse biased GaAs/AlGaAs GRINSCH SQW laser structure
Author :
Moss, D. ; Landheer, D. ; Conn, D. ; Halliday, D. ; Charbonneau, S. ; Aers, G. ; Barber, R. ; Chatenoud, F.
Author_Institution :
Solid State Optoelectron. Consortium, Nat. Res. Council, Ottawa, Ont., Canada
fDate :
6/1/1992 12:00:00 AM
Abstract :
The authors report extremely efficient ( approximately 100% internal quantum efficiency) and high-speed ( approximately 25-pS FWHM) photodetection in a reverse-biased GaAs/AlGaAs ridge waveguide single-quantum-well (SQW) graded-index separate confinement heterostructure (GRINSCH) laser structure near lambda =830 nm. The impulse response is limited by device parasitics to 25 pS at large reverse bias voltages, and by photogenerated electron escape closer to flatband conditions.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; high-speed optical techniques; infrared detectors; integrated optoelectronics; photodetectors; semiconductor junction lasers; 25 ps; 830 nm; GaAs-AlGaAs; III-V semiconductor; device parasitics; flatband conditions; graded-index separate confinement heterostructure; high speed photodetection; impulse response; internal quantum efficiency; large reverse bias voltages; photogenerated electron escape; reverse biased GaAs/AlGaAs GRINSCH SQW laser structure; ridge waveguide single-quantum-well; Electrons; Gallium arsenide; Molecular beam epitaxial growth; Optical devices; Optical waveguides; Photodetectors; Quantum well lasers; Sputter etching; Voltage; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
