Title :
Large-signal temperature-dependent DC model for heterojunction bipolar transistors
Author :
Hajji, R. ; El-Rabaie, S. ; Kouki, A.B. ; Ghannouchi, F.M.
fDate :
10/1/1995 12:00:00 AM
Abstract :
A novel temperature-dependent HBT DC model in a suitable form for implementation in nonlinear circuit simulators is presented. The proposed model is accurate in all operating regions, and its parameters can be extracted easily using suitable optimisation codes. The validity and accuracy of the proposed model are confirmed by comparison to measured DC I-V characteristics of both low-power and high-power devices over a wide temperature range
Keywords :
heterojunction bipolar transistors; power bipolar transistors; semiconductor device models; DC model; HBT; I-V characteristics; heterojunction bipolar transistors; high-power devices; large-signal model; low-power devices; nonlinear circuit simulators; optimisation codes; temperature-dependent model;
Journal_Title :
Microwaves, Antennas and Propagation, IEE Proceedings
DOI :
10.1049/ip-map:19952113
