• DocumentCode
    773409
  • Title

    Modeling the microwave properties of superconductors

  • Author

    Ma, Jian-Guo ; Wolff, Ingo

  • Author_Institution
    Dept. of Electr. Eng., Duisburg Univ., Germany
  • Volume
    43
  • Issue
    5
  • fYear
    1995
  • fDate
    5/1/1995 12:00:00 AM
  • Firstpage
    1053
  • Lastpage
    1059
  • Abstract
    In this paper a macroscopic phenomenological model for the microwave properties of superconductors is presented. The model is based on the idea that there are two kinds of current carriers, and instead of the first London´s equation a new equation is derived. This model can be applied to both low- and high-temperature superconductors. Using this model, an expression for the microwave surface resistance is derived and the surface resistance versus frequency is calculated. The results show that the relation between resistance and frequency is not R32 as indicated by both BCS theory and London model, but Rsa, where a is between 1 and 2 (e.g. a=1.35) for thin film high-Tc superconductors YBa2Cu3O7-δ. The temperature dependence of Rs is simulated using the given model. These relations and the values of the surface resistance agree well with experimental results. A residual resistance may be interpreted from this model
  • Keywords
    barium compounds; high-frequency effects; high-temperature superconductors; superconducting thin films; surface conductivity; yttrium compounds; YBa2Cu3O7-δ; YBa2Cu3O7; current carriers; high-temperature superconductors; low-temperature superconductors; macroscopic phenomenological model; microwave properties; residual resistance; simulation; surface resistance; thin film superconductors; Electrical resistance measurement; Equations; Frequency dependence; High temperature superconductors; Superconducting materials; Superconducting microwave devices; Superconductivity; Surface resistance; Temperature dependence; Wires;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.382065
  • Filename
    382065