Microwave interactions in semiconductor multiple-quantum-well heterostructures utilizing a coplanar-strip geometry device

Author

Kirchoefer, Steven W.

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

43

Issue

5

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

1122

Lastpage

1127

Abstract

A novel device design utilizing a multiple-quantum-well heterostructure conduction channel with an oxide-isolated overlying coplanar-strip transmission line has been constructed. These devices exhibit negative differential conductance in their dc characteristics for current transport in the plane of the quantum-well layers, originating from the change in mobility of the heated electrons within the quantum-well structure. This device design has permitted the observation of nonlinear conduction properties using these multiple-quantum-well heterostructures at microwave frequencies

Keywords

electron mobility; high-frequency effects; hot carriers; negative resistance devices; semiconductor heterojunctions; semiconductor quantum wells; strip lines; DC characteristics; current transport; device design; heated electron mobility; microwave interactions; negative differential conductance; nonlinear conduction; oxide-isolated overlying coplanar-strip transmission line; semiconductor multiple-quantum-well heterostructures; Conducting materials; Coplanar transmission lines; Electromagnetic heating; Electron mobility; Frequency; Gunn devices; Heterojunctions; Microwave devices; Particle scattering; Quantum well devices;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.382075

Filename

382075