DocumentCode :
773502
Title :
Microwave interactions in semiconductor multiple-quantum-well heterostructures utilizing a coplanar-strip geometry device
Author :
Kirchoefer, Steven W.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Volume :
43
Issue :
5
fYear :
1995
fDate :
5/1/1995 12:00:00 AM
Firstpage :
1122
Lastpage :
1127
Abstract :
A novel device design utilizing a multiple-quantum-well heterostructure conduction channel with an oxide-isolated overlying coplanar-strip transmission line has been constructed. These devices exhibit negative differential conductance in their dc characteristics for current transport in the plane of the quantum-well layers, originating from the change in mobility of the heated electrons within the quantum-well structure. This device design has permitted the observation of nonlinear conduction properties using these multiple-quantum-well heterostructures at microwave frequencies
Keywords :
electron mobility; high-frequency effects; hot carriers; negative resistance devices; semiconductor heterojunctions; semiconductor quantum wells; strip lines; DC characteristics; current transport; device design; heated electron mobility; microwave interactions; negative differential conductance; nonlinear conduction; oxide-isolated overlying coplanar-strip transmission line; semiconductor multiple-quantum-well heterostructures; Conducting materials; Coplanar transmission lines; Electromagnetic heating; Electron mobility; Frequency; Gunn devices; Heterojunctions; Microwave devices; Particle scattering; Quantum well devices;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.382075
Filename :
382075
Link To Document :
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