DocumentCode
773791
Title
MOS materials
Author
Hewitt, Michael
Author_Institution
Dept. of Eng., Loyola Marymount Univ., Los Angeles, CA, USA
Volume
9
Issue
3
fYear
1990
Firstpage
17
Lastpage
20
Abstract
The materials most commonly used to make a metal-oxide-semiconductor device, namely Si, SiO/sub 2/ and Al, are discussed, focusing on what makes them so useful. The characteristics of the materials are described, and the ways in which these characteristics are used, and if necessary modified are indicated.<>
Keywords
aluminium; elemental semiconductors; insulating materials; metal-insulator-semiconductor devices; silicon; silicon compounds; Si-SiO/sub 2/-Al; characteristics; materials; metal-oxide-semiconductor device; Aluminum; Atomic layer deposition; Atomic measurements; Charge carrier processes; Crystallization; Impurities; Semiconductor materials; Silicon compounds; Temperature; Tungsten;
fLanguage
English
Journal_Title
Potentials, IEEE
Publisher
ieee
ISSN
0278-6648
Type
jour
DOI
10.1109/45.101394
Filename
101394
Link To Document