Author_Institution :
Dept. of Eng., Loyola Marymount Univ., Los Angeles, CA, USA
Abstract :
The materials most commonly used to make a metal-oxide-semiconductor device, namely Si, SiO/sub 2/ and Al, are discussed, focusing on what makes them so useful. The characteristics of the materials are described, and the ways in which these characteristics are used, and if necessary modified are indicated.<>
Keywords :
aluminium; elemental semiconductors; insulating materials; metal-insulator-semiconductor devices; silicon; silicon compounds; Si-SiO/sub 2/-Al; characteristics; materials; metal-oxide-semiconductor device; Aluminum; Atomic layer deposition; Atomic measurements; Charge carrier processes; Crystallization; Impurities; Semiconductor materials; Silicon compounds; Temperature; Tungsten;
