Gate drive considerations for IGBT modules

Author

Chokhawala, Rahul S. ; Catt, Jamie ; Pelly, Brian R.

Author_Institution

Power Prods. Div., Motorola Inc., Phoenix, AZ, USA

Volume

31

Issue

3

fYear

1995

Firstpage

603

Lastpage

611

Abstract

The switching performance of an IGBT module depends upon the drive circuit characteristics and external DC loop inductance. This paper discusses the influence of these parameters on switching losses, diode recovery, switching voltage transients, short circuit operation, and dv/dt induced current. The paper is a tutorial and identifies trends. It is intended as an aid to the circuit designer, to help him apply the IGBT module to best advantage

Keywords

bipolar transistor switches; driver circuits; inductance; insulated gate bipolar transistors; losses; power bipolar transistors; power semiconductor switches; short-circuit currents; switching circuits; transients; IGBT module; circuit design; diode recovery; drive circuit characteristics; dv/dt induced current; external DC loop inductance; short circuit operation; switching losses; switching performance; switching voltage transients; Inductance; Industry Applications Society; Insulated gate bipolar transistors; MOSFET circuits; Protection; Rectifiers; Semiconductor diodes; Switching circuits; Switching loss; Voltage;

fLanguage

English

Journal_Title

Industry Applications, IEEE Transactions on

Publisher

ieee

ISSN

0093-9994

Type

jour

DOI

10.1109/28.382122

Filename

382122