Title :
SILC effects on E2PROM memory cell reliability
Author :
Larcher, Luca ; Bertulu, Salvatore ; Pavan, Paolo
Author_Institution :
DISMI & INFM, Univ. di Modena a Reggio Emilia, Italy
fDate :
3/1/2002 12:00:00 AM
Abstract :
In this paper, we will investigate SILC effects on the reliability of E2PROM memories. Particularly, we will analyze the influence on the retention properties of E2PROM memory devices of program/erase number of cycles and bias conditions, oxide thickness scaling and quality, and storage field. To accomplish this task, we will use a recently proposed compact E2PROM model, which has been extended to include the stress-induced leakage current (SILC), thus bridging the gap between the oxide quality characterization activity performed on MOS transistors and capacitors, and the actual impact of SILC on the functioning of E2PROM memories
Keywords :
EPROM; integrated circuit modelling; integrated circuit reliability; leakage currents; tunnelling; E2PROM memories; Fowler-Nordheim expression; bias conditions; compact model; excess low field current; floating-gate memory cells; integrated circuit reliability; lumped element model; memory cell reliability; oxide quality; oxide reliability; oxide thickness scaling; program/erase number of cycles; read disturbs; retention properties; storage field; stress-induced leakage current effects; tunnel currents; Character generation; Charge measurement; Current measurement; Degradation; PROM; Quantization; Random access memory; Solid modeling; Stress; Threshold voltage;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2002.1014668
