Steep-Slope Devices: From Dark to Dim Silicon

Author

Swaminathan, Karthik ; Kultursay, Emre ; Saripalli, Vinay ; Narayanan, Vijaykrishnan ; Kandemir, Mahmut T. ; Datta, Soupayan

Volume

33

Issue

5

fYear

2013

fDate

Sept.-Oct. 2013

Firstpage

50

Lastpage

59

Abstract

Although the superior subthreshold characteristics of steep-slope devices can help power up more cores, researchers still need CMOS technology to accelerate sequential applications, because it can reach higher frequencies. Device-level heterogeneous multicores can give the best of both worlds, but they need smart resource management to realize this promise. In this article, the authors discuss device-level heterogeneous multicores and various resource-management schemes for reaching higher energy efficiency.

Keywords

CMOS integrated circuits; microprocessor chips; multiprocessing systems; power aware computing; CMOS technology; device-level heterogeneous multicores; energy efficiency; resource-management schemes; sequential applications; smart resource management; steep-slope devices; subthreshold characteristics; CMOS integrated circuits; Dynamic scheduling; Low voltage; Multicore processing; Performance evaluation; Program processors; Semiconductor device manufacture; Silicon; CMOS-TFET heterogeneous architectures; DVFS; dark silicon; dim silicon; dynamic voltage and frequency scaling; power partitioning; steep-slope devices; thread migration;

fLanguage

English

Journal_Title

Micro, IEEE

Publisher

ieee

ISSN

0272-1732

Type

jour

DOI

10.1109/MM.2013.75

Filename

6576745