Title :
Differential gain and linewidth-enhancement factor in dilute-nitride GaAs-based 1.3-μm diode lasers
Author :
Shterengas, Leon ; Belenky, Gregory L. ; Yeh, Jeng-Ya ; Mawst, Luke J. ; Tansu, Nelson
Author_Institution :
Optoelectron. Group, State Univ. of New York, Stony Brook, NY, USA
Abstract :
The effect of the quantum-well nitride content on the differential gain and linewidth enhancement factor of dilute-nitride GaAs-based near 1.3-μm lasers was studied. Gain-guided and ridge waveguide lasers with 0%, 0.5%, and 0.8% nitrogen content InGaAsN quantum wells were characterized. Experiment shows that the linewidth enhancement factor is independent on the nitride content, and is in the range 1.7-2.5 for λ=1.22--1.34 μm dilute-nitride GaAs-based lasers. Differential gain and index with respect to either current or carrier concentration are reduced in dilute-nitride devices.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; spectral line breadth; waveguide lasers; 1.22 to 1.34 mum; GaAs; GaAs-based lasers; InGaAs quantum wells; InGaAsN; carrier concentration; current concentration; differential gain; dilute-nitride GaAs; dilute-nitride devices; diode lasers; gain-guided waveguide lasers; linewidth-enhancement factor; quantum-well nitride content; ridge waveguide lasers; Chemical lasers; Diode lasers; Electrons; Gallium arsenide; Laser modes; Nitrogen; Optical waveguides; Quantum well lasers; Semiconductor lasers; Waveguide lasers; Lasers; semiconductor lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2005.853736
