Differential gain and linewidth-enhancement factor in dilute-nitride GaAs-based 1.3-μm diode lasers

Author

Shterengas, Leon ; Belenky, Gregory L. ; Yeh, Jeng-Ya ; Mawst, Luke J. ; Tansu, Nelson

Author_Institution

Optoelectron. Group, State Univ. of New York, Stony Brook, NY, USA

Volume

11

Issue

5

fYear

2005

Firstpage

1063

Lastpage

1068

Abstract

The effect of the quantum-well nitride content on the differential gain and linewidth enhancement factor of dilute-nitride GaAs-based near 1.3-μm lasers was studied. Gain-guided and ridge waveguide lasers with 0%, 0.5%, and 0.8% nitrogen content InGaAsN quantum wells were characterized. Experiment shows that the linewidth enhancement factor is independent on the nitride content, and is in the range 1.7-2.5 for λ=1.22--1.34 μm dilute-nitride GaAs-based lasers. Differential gain and index with respect to either current or carrier concentration are reduced in dilute-nitride devices.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; spectral line breadth; waveguide lasers; 1.22 to 1.34 mum; GaAs; GaAs-based lasers; InGaAs quantum wells; InGaAsN; carrier concentration; current concentration; differential gain; dilute-nitride GaAs; dilute-nitride devices; diode lasers; gain-guided waveguide lasers; linewidth-enhancement factor; quantum-well nitride content; ridge waveguide lasers; Chemical lasers; Diode lasers; Electrons; Gallium arsenide; Laser modes; Nitrogen; Optical waveguides; Quantum well lasers; Semiconductor lasers; Waveguide lasers; Lasers; semiconductor lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2005.853736

Filename

1564042