UV laser diode with 350.9-nm-lasing wavelength grown by hetero-epitaxial-lateral overgrowth technology

Author

Kamiyama, Satoshi ; Iida, Kazuyoshi ; Kawashima, Takeshi ; Kasugai, Hideki ; Mishima, Shunsuke ; Honshio, Akira ; Miyake, Yasuto ; Iwaya, Motoaki ; Amano, Hiroshi ; Akasaki, Isamu

Author_Institution

Meijo Univ., Nagoya, Japan

Volume

11

Issue

5

fYear

2005

Firstpage

1069

Lastpage

1073

Abstract

We have demonstrated a UV-laser diode with a lasing wavelength of 350.9 nm, which has a GaN-AlGaN multiquantum-well (MQW) active layer and was grown on low-dislocation-density Al_0.18Ga_0.82N template. The Al_0.18Ga_0.82N template was produced by the hetero-epitaxial lateral overgrowth technology on the low-cost sapphire substrate, and has partially low-dislocation density of approximately 2×10⁷ cm^-2. The lasing operation under pulsed current injection was achieved with the threshold current density of 7.3 kA/cm² and the operating voltage of 10.4 V.

Keywords

III-V semiconductors; aluminium compounds; dislocation density; epitaxial growth; gallium compounds; quantum well lasers; semiconductor growth; ultraviolet sources; 10.4 V; 350.9 nm; Al_0.18Ga_0.82N template; Al₂O₃; GaN-AlGaN; GaN-AlGaN multiquantum-well; UV laser diode; heteroepitaxial lateral overgrowth; low-dislocation-density template; pulsed current injection; sapphire substrate; threshold current density; Aluminum gallium nitride; Biomedical optical imaging; Diode lasers; Gallium nitride; Optical buffering; Optical sensors; Quantum well devices; Semiconductor diodes; Stimulated emission; Substrates; AlGaN; GaN; UV; crack; dislocation; laser diode; metalorganic vapor phase epitaxial (MOVPE); multiquantum well (MQW); nitride; sapphire;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2005.853743

Filename

1564043