Noise characteristics of GaInNAsSb 1300-nm-range VCSEL with optical feedback for isolator-free module

Author

Ariga, M. ; Arai, M. ; Kageyama, T. ; Setiagung, C. ; Ikenaga, Y. ; Iwai, N. ; Shimizu, H. ; Nishikata, K. ; Kasukawa, A. ; Koyama, F.

Author_Institution

Semicond. R&D Center, Furukawa Electr. Co. Ltd., Yokohama, Japan

Volume

11

Issue

5

fYear

2005

Firstpage

1074

Lastpage

1078

Abstract

The behavior of relative intensity noise of GaInNAsSb 1300-nm-range vertical-cavity surface-emitting lasers (VCSELs) is presented for the first time. The relative intensity noise drastically increases beyond a critical optical feedback. It was theoretically and experimentally found that the increase of relaxation oscillation frequencies was effective for the sensitivity of the optical feedback in the single-mode long-wavelength VCSELs. In our experiment, the critical feedback levels were -32 and -29 dB when frequencies were 4.0 and 5.8 GHz. This result is in good agreement with a theory.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser feedback; laser modes; laser noise; semiconductor device noise; semiconductor lasers; surface emitting lasers; 1300 nm; 4.0 to 5.8 GHz; GaInNAsSb; GaInNAsSb VCSEL; critical optical feedback; isolator-free module; noise characteristics; optical feedback; relative intensity noise; relaxation oscillation; single-mode VCSEL; vertical-cavity surface-emitting laser; Distributed Bragg reflectors; Frequency; Laser feedback; Laser noise; Laser theory; Optical feedback; Optical noise; Semiconductor device noise; Surface emitting lasers; Vertical cavity surface emitting lasers; 1300-nm VCSEL; Feedback noise; GaInNAsSb; isolator free; optical feedback; relative intensity noise (RIN); vertical-cavity surface-emitting laser (VCSEL);

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2005.853754

Filename

1564044