Title :
InP-based monolithic RFPD/HBT photoreceivers integrated with on-chip InP V-grooves
Author :
Lee, Bangkeun ; Yang, Kyounghoon
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejon, South Korea
Abstract :
InP-based OEIC photoreceivers have been fabricated using a shared layer integration scheme of refracting facet photodiodes (RFPDs) and heterojunction bipolar transistors (HBTs) (for the first time, to the authors´ knowledge). Furthermore, on-chip InP V-grooves were monolithically integrated with RFPD/HBT photoreceivers for efficient optical coupling with optical fibres.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical receivers; photodiodes; InP; InP OEIC photoreceiver; heterojunction bipolar transistor; monolithic integration; on-chip InP V-groove; optical coupling; optical fibre; refracting facet photodiode; shared layer integration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030763
