DocumentCode
774138
Title
InP-based monolithic RFPD/HBT photoreceivers integrated with on-chip InP V-grooves
Author
Lee, Bangkeun ; Yang, Kyounghoon
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejon, South Korea
Volume
39
Issue
16
fYear
2003
Firstpage
1203
Lastpage
1204
Abstract
InP-based OEIC photoreceivers have been fabricated using a shared layer integration scheme of refracting facet photodiodes (RFPDs) and heterojunction bipolar transistors (HBTs) (for the first time, to the authors´ knowledge). Furthermore, on-chip InP V-grooves were monolithically integrated with RFPD/HBT photoreceivers for efficient optical coupling with optical fibres.
Keywords
III-V semiconductors; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical receivers; photodiodes; InP; InP OEIC photoreceiver; heterojunction bipolar transistor; monolithic integration; on-chip InP V-groove; optical coupling; optical fibre; refracting facet photodiode; shared layer integration;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030763
Filename
1226582
Link To Document